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2SK3606-01 - N-CHANNEL SILICON POWER MOSFET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

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Full PDF Text Transcription for 2SK3606-01 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3606-01. For precise diagrams, and layout, please refer to the original PDF.

2SK3606-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL S...

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ce No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.