2SK3606-01 Overview
Key Features
- Trench Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK3606-01 | Fuji Electric | N-CHANNEL SILICON POWER MOSFET |
| 2SK3606-01 | Inchange Semiconductor | N-Channel MOSFET Transistor |