2SK3983-01L - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Key Features

High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

2SK3983-01L n-channel silicon power mosfet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK3983-01L
Manufacturer	Fuji Electric
File Size	230.34 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3983-01L Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK3983-01L	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3983-01S	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3983-01SJ	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3980	N-Channel Silicon MOSFET	Sanyo Semicon Device
2SK3981-01	N-Channel MOSFET Transistor	Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number	Description
2SK3983-01S	N-CHANNEL SILICON POWER MOSFET
2SK3983-01SJ	N-CHANNEL SILICON POWER MOSFET
2SK3981-01	N-CHANNEL SILICON POWER MOSFET
2SK3982-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3987-01L	N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK3983-01L,S,SJ FUJIPOWERMOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX Ratings 900 900 Unit V V Remarks VGS=-30V Continuous drain current ID ±2.6 A Pulsed drain current ID(puls] ±10.4 A Gate-source voltage VGS Repetitive or non-repetitive IAR ±30 2.6 V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max.