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2SK3983-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3983-01SJ datasheet PDF. This datasheet also covers the 2SK3983-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3983-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fuji Electric

Part Number Description
2SK3983-01S N-CHANNEL SILICON POWER MOSFET
2SK3983-01L N-CHANNEL SILICON POWER MOSFET
2SK3981-01 N-CHANNEL SILICON POWER MOSFET
2SK3982-01MR N-CHANNEL SILICON POWER MOSFET
2SK3987-01L N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3983-01L,S,SJ FUJIPOWERMOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX Ratings 900 900 Unit V V Remarks VGS=-30V Continuous drain current ID ±2.6 A Pulsed drain current ID(puls] ±10.4 A Gate-source voltage VGS Repetitive or non-repetitive IAR ±30 2.6 V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max.