• Part: FGW40XS65C
  • Description: Discrete IGBT
  • Manufacturer: Fuji Electric
  • Size: 566.38 KB
Download FGW40XS65C Datasheet PDF
Fuji Electric
FGW40XS65C
FGW40XS65C is Discrete IGBT manufactured by Fuji Electric.
Features Low power loss Low switching surge and noise High reliability, high ruggedness Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbol VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IGBT Max. Power Dissipation Ptot_IGBT FWD Max. Power Dissipation Ptot_FWD Operating Junction Temperature Tvj Storage Temperature Tstg Value 650 ± 20 ± 30 61 40 160 64 40 160 234 174 -40 ~ +175 -55 ~ +175 Unit Remarks V tp < 1 μs A TC = 25 °C A TC = 100 °C A Note - 1 VCE ≤ 650 V Tvj ≤ 175 °C A Note -...