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FGW40N120HD - Discrete IGBT

Description

Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal resistance characteristics Items Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resista

Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Full PDF Text Transcription

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http://www.fujielectric.com/products/semiconductor/ FGW40N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 40A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Short Circuit Withstand Time IGBT Max. Power Dissipation FWD Max.
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