FGW40N120WE
FGW40N120WE is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tj=25°C (unless otherwise specified)
Items Collector-Emitter voltage Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbol VCES VGES IC@25 IC@100 ICP IF@25
IF@100 IFP
Short Circuit Withstand Time t SC
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 65 40 160 160 60 40 160
430 190 -40~+175 -55~+175
Unit V V A A A A A A A
μs
°C °C
Remarks
TC=25°C, Tj=150°C TC=100°C, Tj=150°C Note
- 1 VCE≤1200V, Tj≤175°C
Note
- 1 VCC≤600V, VGE=15V Tj≤150°C TC=25°C TC=25°C
Note
- 1 : Pulse width limited by Tjmax.
Electrical characteristics at Tj= 25°C (unless otherwise specified) Static Characteristics
Description
Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy
Turn-Off...