• Part: FGW40N120WE
  • Description: Discrete IGBT
  • Manufacturer: Fuji Electric
  • Size: 662.60 KB
Download FGW40N120WE Datasheet PDF
Fuji Electric
FGW40N120WE
FGW40N120WE is Discrete IGBT manufactured by Fuji Electric.
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Symbol VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time t SC IGBT Max. Power Dissipation PD_IGBT FWD Max. Power Dissipation PD_FWD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 1200 ±20 65 40 160 160 60 40 160 430 190 -40~+175 -55~+175 Unit V V A A A A A A A μs °C °C Remarks TC=25°C, Tj=150°C TC=100°C, Tj=150°C Note - 1 VCE≤1200V, Tj≤175°C Note - 1 VCC≤600V, VGE=15V Tj≤150°C TC=25°C TC=25°C Note - 1 : Pulse width limited by Tjmax. Electrical characteristics at Tj= 25°C (unless otherwise specified) Static Characteristics Description Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off...