FGW40N120W
FGW40N120W is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items Collector-Emitter Voltage Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Symbols VCES VGES IC@25 IC@100 ICP
- Short Circuit Withstand Time t SC
IGBT Max. Power Dissipation
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 65 40 160 160
360 -40 ~ +175 -55 ~ +175
Units
Remarks
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note
- 1
A VCE≤1200V, Tj≤175°C
μs
VCC≤600V, VGE=15V Tj≤150°C
W TC=25°C
°C
°C
Note
- 1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Description
Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On...
