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FGW40N120WD Datasheet Discrete IGBT

Manufacturer: Fuji Electric

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General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbols ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff VF trr1 trr2 Qrr Conditions VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = 20V, IC = 40mA VGE = 15V, IC = 40A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 400

Overview

http://www.fujielectric.com/products/semiconductor/ FGW40N120WD Discrete IGBT (High-Speed W series) 1200V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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