FGW50N60HD
FGW50N60HD is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply Power coditionner Power factor correction circuit
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items Collector-Emitter Voltage Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature
Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP t SC
PD_IGBT PD_FWD Tj Tstg
Characteristics 600 ±20 95 50 150 150 43 25 150
360 125 -40 ~ +175 -55 ~ +175
Units
Remarks
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note
- 1
A VCE≤600V,Tj≤175°C
A Note
- 1
µs
VCC≤300V,VGE=12V Tj≤150°C
TC=25°C TC=25°C
°C
°C
Gate
Collector Emitter
Note
- 1 : Pulse width limited by...
