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FGW50N65WD Datasheet Discrete IGBT

Manufacturer: Fuji Electric

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General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbols ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff VF trr Qrr trr Qrr Conditions VCE = 650V, VGE = 0V VCE = 0V, VGE = ±20V VCE = 20V, IC = 50mA VGE = 15V, IC = 50A VCE=25V VGE=0V f=1MHz VCC = 520V I

Overview

FGW50N65WD http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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