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FGW60N65W Datasheet Discrete IGBT

Manufacturer: Fuji Electric

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General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Conditions VCE = 650V, VGE = 0V VCE = 0V, VGE = ±20V VCE = 20V, IC = 60mA VGE = 15V, IC = 60A VCE=25V VGE=0V f=1MHz VCC = 520V IC = 60A VGE = 15V Tj=25°C Tj=175°C Tj=25°C Tj=125°C Tj=175°C Tj = 25°C, VCC = 400V IC = 30A, VGE = 15V RG = 10Ω, L = 500μH Energy loss include “tail” and FWD (FGW60N65WD) reverse recovery.

Tj = 150°C, VCC = 400V IC = 30A, VGE = 15V RG = 10Ω, L = 500μH Energy loss includ

Overview

FGW60N65W http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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