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FGW60N65W - Discrete IGBT

Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy

Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Datasheet preview – FGW60N65W

Datasheet Details

Part number FGW60N65W
Manufacturer Fuji Electric
File Size 680.23 KB
Description Discrete IGBT
Datasheet download datasheet FGW60N65W Datasheet
Additional preview pages of the FGW60N65W datasheet.

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Full PDF Text Transcription

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FGW60N65W http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 60A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbols VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Max.
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