Datasheet4U Logo Datasheet4U.com

FGW60N65WE Datasheet Discrete IGBT

Manufacturer: Fuji Electric

📥 Download Datasheet

General Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 60mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 60A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 60A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy VGE = 15V td(on) tr td(off) tf Eon Eoff Tj = 25°C, VCC = 400V IC = 30A, VGE = 15V RG = 10Ω, L = 500μH Energy los

Overview

FGW60N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

More Datasheets from Fuji Electric

Part Number Description
FGW60N65W Discrete IGBT
FGW15N120H Discrete IGBT
FGW15N120HD Discrete IGBT
FGW15N120VD Discrete IGBT
FGW25N120VD Discrete IGBT
FGW25N120WD Discrete IGBT
FGW25N120WE Discrete IGBT
FGW30N120H Discrete IGBT
FGW30N120HD Discrete IGBT
FGW30N60VD Discrete IGBT