FGW60N65WE - Discrete IGBT

Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 60mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 60

Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

Fuji Electric

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Datasheet Details

Part number	FGW60N65WE
Manufacturer	Fuji Electric
File Size	642.16 KB
Description	Discrete IGBT
Datasheet	FGW60N65WE Datasheet
Additional preview pages of the FGW60N65WE datasheet.

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FGW60N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 60A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbols VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation PD_IGBT FWD Max.

Published: Apr 9, 2025 |