FGZ50N65WE - Discrete IGBT

Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy

Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

Fuji Electric

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Datasheet Details

Part number	FGZ50N65WE
Manufacturer	Fuji Electric
File Size	777.17 KB
Description	Discrete IGBT
Datasheet	FGZ50N65WE Datasheet
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FGZ50N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power conditioner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj=25°C (unless otherwise specified) Equivalent circuit Items Symbol Collector-Emitter Voltage V CES Gate-Emitter Voltage Transient Gate-Emitter Voltage V GES DC Collector Current IC@25 I C@100 Pulsed Collector Current ICP Turn-Off Safe Operating Area - Diode Forward Current I F@25 I F@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation P D_IGBT FWD Max.

Published: Apr 9, 2025 |