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FGZ50N65WE Datasheet Discrete IGBT

Manufacturer: Fuji Electric

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General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Forward Voltage Drop Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol I CES I GES VGE (th) VCE (sat) Cies Coes Cres QG t d(on) tr t d(of f ) tf Eon Eoff t d(on) tr t d(of f ) tf Eon Eoff VF trr Qrr trr Qrr Conditions VCE = 650V, VGE = 0V VCE = 0V, VGE = ±20V

Overview

FGZ50N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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