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FGZ75XS65C - Discrete IGBT

Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness.

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Datasheet Details

Part number FGZ75XS65C
Manufacturer Fuji Electric
File Size 611.17 KB
Description Discrete IGBT
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FGZ75XS65C Discrete IGBT (XS-series) 650V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbol VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation Ptot_IGBT FWD Max.
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