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FMV11N60E Datasheet N-channel Silicon Power MOSFET

Manufacturer: Fuji Electric

Overview: .DataSheet.co.kr FMV11N60E Super FAP-E3 series.

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS =±30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5.5A RG =15Ω Vcc =300V I D =11A VGS =10V L=2.64mH, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=25°C Characteristics 600 600 ±11 ±44 ±30 11 384 6.5 4.9 100 2.16 65 150 -55 to + 150 min.

600 2.5 6 11 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C typ.

3.0 10 0.641 12 1700 150 11 21 9.5 100 19 48.5 12.5 14 0.86 0.52 5.5 max.

Key Features

  • Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-.

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