| Part Number | FMV11N60E Datasheet |
|---|---|
| Manufacturer | Fuji Electric |
| Overview | Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum. Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILIC. |
FMV11N60E Datasheet PDF
The FMV11N60E is a N-CHANNEL SILICON POWER MOSFET.
| Part Number | FMV11N60E Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FMV11N60E
·FEATURES ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% av.
*With TO-220F packaging *Maintains both low power loss andlow noise *Very high commutation ruggedness *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operationz *APPLICATIONS *Switching applications *DC-DC converters *Uninterruptible pow. |