11N60E datasheet by Fuji Electric.
| Part number | 11N60E |
|---|---|
| Datasheet | 11N60E-FujiElectric.pdf |
| File Size | 386.41 KB |
| Manufacturer | Fuji Electric |
| Description | FMV11N60E |
|
|
Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range ID IDP VGS IAR EAS EAR dV/dt -di/d.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
11N60 | N-Channel MOSFET | Fairchild Semiconductor |
 |
11N60C2 | Power Transistor | Infineon |
 |
11N60C3 | Power Transistor | Infineon Technologies |
 |
11N60K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
 |
11N60M6 | N-channel Power MOSFET | STMicroelectronics |
View all Fuji Electric datasheets
| Part Number | Description |
|---|
