Datasheet Details
| Part number | 11N60E |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 386.41 KB |
| Description | FMV11N60E |
| Datasheet | 11N60E-FujiElectric.pdf |
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Overview: FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER.
| Part number | 11N60E |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 386.41 KB |
| Description | FMV11N60E |
| Datasheet | 11N60E-FujiElectric.pdf |
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Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range ID IDP VGS IAR EAS EAR dV/dt -di/d
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 11N60 | N-Channel MOSFET | Fairchild Semiconductor | |
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11N60C2 | Power Transistor | Infineon |
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11N60C3 | Power Transistor | Infineon Technologies |
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11N60K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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11N60M6 | N-channel Power MOSFET | STMicroelectronics |
| Part Number | Description |
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