11N60E Datasheet Text
FMV11N60E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
Outline Drawings [mm]
TO-220F(SLS)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum Ratings and...
