The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.datasheet4u.com
SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
VDS RDS(on) ID
P-TO262-3-1 P-TO220-3-31
650 0.38 11
V Ω A
P-TO220-3-1
Type SPP11N65C3 SPA11N65C3 SPI11N65C3
Package P-TO220-3-1 P-TO262-3-1
Ordering Code Q67040-S4557 Q67040-S4561
Marking 11N65C3 11N65C3 11N65C3
P-TO220-3-31 Q67040-S4554
Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11 7 11 1) 71) 33 340 0.6 4 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.