Datasheet4U Logo Datasheet4U.com

11N65C3 - SPP11N65C3

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.datasheet4u.com SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.38 11 V Ω A P-TO220-3-1 Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4557 Q67040-S4561 Marking 11N65C3 11N65C3 11N65C3 P-TO220-3-31 Q67040-S4554 Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 11 1) 71) 33 340 0.6 4 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.