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K2651-01MR - N-channel MOS-FET

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V www. DataSheet4U. com 2,5Ω 6A 50W > Outline Drawing >.

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Datasheet Details

Part number K2651-01MR
Manufacturer Fuji Electric
File Size 328.13 KB
Description N-channel MOS-FET
Datasheet download datasheet K2651-01MR Datasheet
Additional preview pages of the K2651-01MR datasheet.

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2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V www.DataSheet4U.com 2,5Ω 6A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 900 6 24 ±30 6 71,9 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
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