K2655-01R - N-channel MOS-FET

Features

- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >.

Fuji Electric

Datasheet Details

Part number	K2655-01R
Manufacturer	Fuji Electric
File Size	285.52 KB
Description	N-channel MOS-FET
Datasheet	K2655-01R Datasheet
Additional preview pages of the K2655-01R datasheet.

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Full PDF Text Transcription

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2SK2655-01R FAP-IIS Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum RatingsT( C=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage V DS 900 Continous Drain Current ID 8 Pulsed Drain Current I D(puls) 32 Gate-Source-Voltage V GS ±30 Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy I AR E AS 8 141 Max.

Published: Aug 31, 2016 |