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2SK3874-01R - N-CHANNEL SILICON POWER MOSFET

Key Features

  • High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

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2SK3874-01R N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Drain-source voltage VDS 280 VDSX 280 Continuous Drain Current ID 56 Pulsed Drain Current ID(puls] ±224 Gate-Source Voltage VGS ±30 Maximum Avalanche current IAR 56 Non-Repetitive EAS 1039.1 Maximum Avalanche Energy Repetitive EAR 21 Maximum Avalanche Energy Maximum Drain-Source dV/dt dVDS/dt 20 Peak Diode Recovery dV/dt dV/dt 5 Max.