FGW25N120W Datasheet Discrete IGBT

Manufacturer: Fuji Electric

FGW25N120W discrete igbt by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	FGW25N120W
Manufacturer	Fuji Electric
File Size	487.62 KB
Description	Discrete IGBT
Datasheet	FGW25N120W Datasheet

General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) Cies Coes Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Conditions VCE = 1200V, VGE = 0V Tj=25°C Tj=175°C VCE = 0V, VGE = ±20V VCE = +20V, IC = 25mA VGE = +15V, IC = 25A Tj=25°C Tj=175°C VCE=25V VGE=0V f=1MHz VCC = 400V IC = 25A VGE = 15V Tj = 25°C VCC = 600V IC = 25A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD (FDRW12S120J) reverse recovery.

Tj = 150°C VCC = 600V IC = 25A VGE = 15V RG = 10Ω L = 500μH

Overview

http://www.fujielectric.com/products/semiconductor/ FGW25N120W Discrete IGBT (High-Speed V series) 1200V /.

Key Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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