Full PDF Text Transcription for K3362-01 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3362-01. For precise diagrams, and layout, please refer to the original PDF.
2SK3362-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving powe...
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ed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-220AB Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 Unit Remarks V ±50 A ±200 A ±20 V 867 mJ *1 80 W +150 -55 to +150 °C °C *1 L=0.
K3362-01 Datasheet
