2SK2690-01
2SK2690-01 is N-channel MOS-FET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range
Symbol
ID p
- 1
Tch
Tstg
Ratings 60
±80 ±320
±20 599 125 +150 -55 to +150
Unit V A A V m J W °C °C
- 1 L=0.125m H, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Symbol BVDSS VGS(th) IDSS
IGSS RDS(on)
Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off time toff
Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr
Test Conditions ID= 1m A VGS=0V ID= 1m A VDS=VGS VDS=60V VGS=0V
VGS=±20V VDS=0V ID=40A
ID=40A VDS=25V VDS=25V VGS=0V f=1MHz
Tch=25°C Tch=125°C
VGS=4V VGS=10V
VCC=30V ID=75A
VGS=10V
RGS=10 Ω L=100µH Tch=25°C IF=160A VGS=0V Tch=25°C IF=80A VGS=0V -di/dt=100A/µs Tch=25°C
Drain(D)...