2SK2808
2SK2808 is N-channel MOS-FET manufactured by Fuji Electric.
Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
30V
20mΩ ±35A
20W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 ±35 ±140 ±16 129.3 20 150 -55 ~ +150
L=0.70m H,Vcc=12V
> Equivalent Circuit
Unit V A A V m J W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
- Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=17,5A VGS=4V VGS=10V ID=17,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=35A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=2x IDR VGS=0V -d IF/dt=100A/µs Tch=25°C
Min. 30 1,0
Typ. 1,5 10 0,2 10 22 14 33 1100 550 240 9 75 15 50 0,98 50 0,08
Max. 2,0 500 1,0 100 30 20 1650 830 360 15 115 23 75 1,71
Unit V V µA m A n A mΩ mΩ S p F p F p F ns ns ns ns A V ns µC
Symbol R th(ch-c) R th(ch-a)
Test conditions channel to case channel to air
Min.
Typ.
Max. 6,25 62,5
Unit °C/W °C/W
N-channel...