2SK2872
2SK2872 is N-channel MOS-FET manufactured by Fuji Electric.
Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
450V
1,2Ω
±8A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 450 ±8 ±32 ±35 8 164.1 30 150 -55 ~ +150
L=4.70m H,Vcc=45V
> Equivalent Circuit
Unit V A A V A m J W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
- Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=450V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω Tch=25°C L = 4,70m H IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C
Min. 450 3,5
Typ. 4,0 10 0,2 10 1,0 4 540 100 45 13 40 45 25 1,1 450 3,7
Max. 4,5 500 1,0 100 1,2 810 150 70 20 60 70 40 1,65
Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns µC
Symbol R th(ch-c) R th(ch-a)
Test conditions channel to case channel to air
Min.
Typ.
Max. 4,17 62,5
Unit °C/W...