2SK2901-01S
2SK2901-01S is N-CHANNEL SILICON POWER MOS-FET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
T-Pack(L)
FUJI POWER MOS-FET
T-Pack(S)
10 +0.5
0.9 ±0.3
4.5 ±0.2 1.32
1.5 Max
9.3 ±0.5
1.2 ±0.2
- 0.1 5.08 2.7
+0.2
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
0.4 +0.2
1. Gate 2, 4. Drain 3. Source
3. Source
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV
- 1 PD Tch Tstg Rating 60 ±45 ±180 ±30 461.9 60 +150 -55 to +150 Unit
Equivalent circuit schematic
Drain(D)
V A A V m J W °C °C
- 1 L=0.304m H, Vcc=24V
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V VDS=25V VGS =0V f=1MHz VCC=30V ID=45A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=45A VGS=0V Tch=25°C IF=45A VGS=0V -di/dt=100A/µs Tch=25°C
Min.
60 2.5 Tch=25°C Tch=125°C
Typ.
Max.
3.5 500 1.0 100 14.5 3450 1370 390 30 80 120 80 1.5
Units
V V µA m A n A mΩ S p F
3.0 10 0.2 10 12.0 10.0 25.0 2300 910 260 18 55 70 48 45 1.0 60 0.11 ns
A V ns µC
Thermalcharacteristics...
