2SK2903-01MR
2SK2903-01MR is N-CHANNEL SILICON POWER MOS-FET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
3. Source
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV
- 1 PD Tch Tstg Rating 60 ±50 ±200 ±30 720.8 50 +150 -55 to +150 Unit
Equivalent circuit schematic
Drain(D)
V A A V m J W °C °C
- 1 L=0.384m H, Vcc=24V
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS =60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS =0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.0 70 0.13 1.5
Min.
60 2.5 Tch=25°C Tch=125°C
Typ.
3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65
Max.
3.5 500 1.0 100 12 4650 1950 530 30 120 130 120
Units
V V µA m A n A mΩ S p F
20 ns
A V ns µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
2.5 62.5
Units
°C/W °C/W
Characteristics
Power Dissipation PD=f(Tc)
60...