• Part: 2SK3219-01MR
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 148.55 KB
Download 2SK3219-01MR Datasheet PDF
Fuji Electric
2SK3219-01MR
2SK3219-01MR is N-Channel MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV - 1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 150 ±40 ±160 ±30 387 2.0 70 +150 -55 to +150 Unit V A A V m J W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=420µH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=150V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS =25V VGS =0V f=1MHz VCC=48V ID=40A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C 40 0.97 180 1.30 1.46 Min. 150 2.5 Tch=25°C Tch=125°C Typ. 3.0 1 0.1 10 37 25.0 2650 550 240 21 95 115 60 Max. 3.5 100 0.5 100 43 3980 830 360 32 142 173 90 Units V V µA m A n A mΩ S p F 12.5 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.79 62.5 Units °C/W °C/W 2SK3218-01 Characteristics Power Dissipation PD=f(Tc) 80...