2SK3262-01MR Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV - 1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 200 ±20 ±80 ±20 355 2 45 +150 -55 to +150 Unit V A A V m J W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=1.6m H, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=200V VGS=0V VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS =0V f=1MHz VCC=100V ID=20A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C 20 0.93 250 2.90 1.40 Min. 200 1.0 Tch=25°C Tch=125°C Typ. 1.5 10 0.2 10 110 85 19.0 1700 290 185 10 45 225 120 Max. 2.0 500 0.5 100 150 100 2550 435 280 15 70 340 180 Units V V µA m A n A mΩ S p F 9.0 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.78 62.5 Units °C/W °C/W Characteristics Power Dissipation PD=f(Tc) 50...