• Part: 2SK3362
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 332.53 KB
Download 2SK3362 Datasheet PDF
Fuji Electric
2SK3362
2SK3362 is N-Channel MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-220AB Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 Unit Remarks V ±50 A ±200 ±20 V 867 m J - 1 80 W +150 -55 to +150 °C °C - 1 L=0.463m H, Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=75A VGS=10V Tch=25°C Tch=125°C VGS=4V VGS=10V L=100µH Tch=25°C IF=160A VGS=0V Tch=25°C IF=80A -di/dt=100A/µs Tch=25°C Min. Typ. Max. Units 60...