2SK3363-01
2SK3363-01 is N-Channel MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
3. Source
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV
- 1 PD Tch Tstg Rating 30 ±50 ±200 ±16 1735 80 +150 Unit V A A V m J W °C °C -55 to +150
- 1 L=0.925m H, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS V DS=30V VGS=0V VGS=±16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS =25V VGS =0V f=1MHz VCC=15V ID=100A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.0 65 0.12 1.5
Min.
30 1.0 Tch=25°C Tch=125°C
Typ.
1.5 10 0.2 10 8.0 5.3 70 3900 2000 850 17 70 250 180
Max.
2.0 500 1.0 100 10. 5 6.8 5850 3000 1280 30 110 380 270
Units
V V µA m A n A mΩ S p F
35 ns
A V ns µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.56 75.0
Units
°C/W °C/W
Characteristics
Power Dissipation PD=f(Tc)
100 10
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