2SK3364-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls) VGS EAV - 1 PD Tch Tstg Rating 60 ± 50 ±200 ±30 867 80 +150 -55 to +150 - 1 L=0.463m H, Unit V A A V m J W °C °C Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS V DS=60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.0 70 0.13 1.5 Min. 60 2.5 Tch=25°C Tch=125°C Typ. 3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65 Max. 3.5 500 1.0 100 12 4650 1950 530 30 120 130 120 Units V V µA m A n A mΩ S p F 20 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units °C/W °C/W Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25°C...