2SK3451-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±13 ±52 ±30 13 216.7 20 5 2.16 80 +150 Operating and storage Tch -55 to +150 temperature range Tstg Isolation Voltage VISO - 4 2 < - 1 L=2.36m H, Vcc=60V, See to Avalanche Energy Graph - 2 Tch=150°C < DSS, Tch=150°C < - 3 IF< =-ID, -di/dt=50A/µs, Vcc=BV - 4 t=60sec, f=60Hz Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR - 2 EAS - 1 d VDS /dt d V/dt - 3 PD Ta=25°C Tc=25°C Unit V A A V A m J k V/µs k V/µs W °C °C k Vrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω VCC =300V ID=12A VGS=10V L=2.36m H Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 600 3.0 Typ. Max. 5.0 25...