2SK3501-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications .. Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 600 A ID ±10 A ID(puls] ±40 V VGS ±30 A IAR - 2 10 m J EAS - 1 217 k V/µs d VDS/dt - 4 20 d V/dt - 3 5 k V/µs PD Ta=25°C 2.02 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C - 1 L=3.99m H, Vcc=60V - 2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C - 3 IF< - 4 VDS < = 600V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Ω VCC =250V ID=10A VGS=10V L=3.99m H Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.75 Units V V µA n A Ω S p F 10 0.58 8 1200 1800 140 210 6 9...