2SK3526-01L
2SK3526-01L is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
P4
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings 600 ±8 ±32 ±30 8 145.6 20 5 1.67 135 +150 Operating and storage -55 to +150 temperature range
- 1 L=4.2m H, Vcc=60V, See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF <
- 4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 600V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C Tch Tstg Unit V A A V A m J k V/µs k V/µs W °C °C
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC=300V ID=6A VGS=10V L=4.2m H Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 0.93 6 750 100 4.0 14 9 24 7 20 8.5 5.5 1.00 0.7 3.5
Min.
600 3.0
Typ.
Max.
5.0 25 250 100 1.20 1130 150 6.0 21 14 36 10.5 30 13 8.5 1.50
Units
V V µA n A Ω S p F
3 ns n...