2SK3589-01 Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Outline Drawings (mm) O Š }- @- ¡`Œ OUT VIEW Fig.1 o ‚Q Ž}‹- î- Æ- MARKING - Ž ¦ “ à - e Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters o ‚ }‹- Žî- Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX - 5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 100 70 ±50 ±6.9 - - ±200 ±30 50 465 20 5 123 2.4 +150 Unit V V A A A V A m J k V/µs k V/µs W W °C °C DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j- ’ P ‚ .- i Q jÍŽ- ‚@ - ¡à- “ l- l’B é- ‚- Æ “à- e - Ž¦ - ¤W Special specification for customer CONNECTION 11 G G :: Gate Gate Œ‹- ü} “ÁŽê- i‹L- † Lot No. ƒ- bƒg No. Type name 22 S1 S1 :: Source1 Source1 33 S2 S2 :: Source2 Source2 4 4D D :: Drain Drain G S1 S2 Œ`- ¼ Equivalent circuit schematic D : Drain G :...