2SK3646-01S Datasheet | Fuji Electric

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX - 5 ID ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±41 ±164 ±30 41 204.7 20 5 1.67 150 +150 -55 to +150 Unit V V A A V A m J k V/µs k V/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) - 1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 3 IF< = BVDSS, Tch < = 150°C - 4 V DS < = -ID, -di/dt=50A/µs, Vcc < =100V Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr - 2 Tch < =150°C - 5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC =50V ID=30A VGS=10V L=146µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 34 18 1110 280 22 16 23 31 16 32 13 9 1.10 0.1...