• Part: 2SK3647-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 120.65 KB
Download 2SK3647-01 Datasheet PDF
Fuji Electric
2SK3647-01
2SK3647-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS VDSX - 5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Tc=25°C Ta=25°C Ratings 100 70 ±41 ±5.2 - - ±164 ±30 41 204.7 20 5 150 2.4 - - +150 -55 to +150 Unit V V A A A V A m J k V/µs k V/µs W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate Operating and storage Tch °C temperature range Tstg °C S1 : Source - - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) - 1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph - 2 Tch < =150°C < < < - 3 IF< -I D , -di/dt=50A/µs, Vcc BV DSS , Tch 150°C - 4 VDS = 100V - 5 VGS=-30V - 6 t=60sec f=60Hz = = = S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC =50V ID=30A...