• Part: 2SK3690-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 144.67 KB
Download 2SK3690-01 Datasheet PDF
Fuji Electric
2SK3690-01
2SK3690-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR d V DS /dt d V/dt PD Tch Tstg Ratings 600 600 4.5 ±18 ±30 4.5 261.1 8 20 5 80 2.02 +150 -55 to +150 Unit V V A A V A m J m J Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note - 1 Note - 2 Note - 3 Source(S) Note - 1:Tch < = 150°C,Repetitive and Non-repetitive Note - 2:Starting Tch=25°C,IAS=1.8A,L= 148m H, VCC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note - 3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. < -ID, -di/dt = 50A/µs,VCC= < BVDSS,Tch= <150°C Note - 4:IF = k V/µs VDS< =600V k V/µs Note - 4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=600V VGS=0V...