• Part: 2SK3696-01MR
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 134.12 KB
Download 2SK3696-01MR Datasheet PDF
Fuji Electric
2SK3696-01MR
2SK3696-01MR is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source d V/dt Peak diode recovery d V/dt Peak diode recovery -di/dt Max. power dissipation Symbol Ratings V DS 500 ID ±13 ID(puls] ±52 VGS ±30 IAS 13 EAS d V DS/dt d V/dt -di/dt PD 202 Unit V A A V A m J Remarks Tch < =150°C - 1 Equivalent circuit schematic Drain(D) k V/s 20 VDS < = 500V 5 k V/µs - 2 100 A/µs - 3 2.16 W Ta=25°C 70 Tc=25°C Operating and storage Tch +150 °C temperature range Tstg °C -55 to +150 Isolation voltage VISO 2 k Vrms t=60sec f=60Hz - 1 L=2.20m H, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph - 2 IF < -ID, -di/dt=100A/µs, VCC < BVDSS, Tch < 150°C = -ID, d V/dt=5k V/µs, VCC = - 3 IF < BVDSS, Tch <= 150°C < = = = Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6.5A VGS=10V RGS=10 Ω V CC =250V ID=13A VGS=10V L=2.20m H Tch=25°C IF=13A VGS=0V Tch=25°C...