• Part: 2SK3697-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 142.57 KB
Download 2SK3697-01 Datasheet PDF
Fuji Electric
2SK3697-01
2SK3697-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery di/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR IAR EAS d VDS/dt d V/dt -di/dt PD Tch Tstg Ratings 600 600 ±42 ±2.7 ±168 ±30 42 21 828 20 5 100 600 2.50 +150 -55 to +150 Unit V V A A A V A A m J k V/µs k V/µs A/µs W °C °C Remarks VGS=-30V Ta=25°C Equivalent circuit schematic Drain(D) Tch < = 25°C <150°C Tch = Gate(G) Note - 2 VDS< =600V Note - 3 Note - 4 Tc=25°C Ta=25°C Source(S) Note - 2:Starting Tch=25°C,L= 861µH,VCC=60V See to the ‘Avalanche Energy’ graph < < Note - 3:IF < = -ID, -di/dt = 100A/µs,VCC= BVDSS,Tch= 150°C < < -I D , -d V/dt = 5k V/ µ s,V CC BV DSS ,Tch Note - 4:IF < = =150°C = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge .. Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS Q GD IAV VSD trr Q rr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=21A VGS=10V ID=21A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=21A VGS=10V...