• Part: 2SK3775-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 126.19 KB
Download 2SK3775-01 Datasheet PDF
Fuji Electric
2SK3775-01
2SK3775-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Foot Print Equivalent circuit schematic Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR d V DS /dt d V/dt PD Tch Tstg Ratings 300 300 ±32 ±2.4 ±128 ±30 32 597.4 27 20 5 270 2.40 +150 -55 to +150 Unit V V A A A V A m J m J Remarks VGS=-30V S1 : Source G : Gate D : Drain Ta=25°C S2 : Source Note - 1:Surface mounted on 1000mm2,t=1.6mm Note - 2 Note - 3 Note - 4 FR-4 PCB(Drain pad area:500mm2) Note - 2:Tch < = 150°C,Repetitive and Non-repetitive Note - 3:Starting Tch=25°C,IAS=13A,L=6.13m H, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. k V/µs VDS< = 300V See to the ‘Avalanche Energy’ graph k V/µs Note - 5 Note - 4:Repetitive rating:Pulse width limited by Tc=25°C W maximum channel temperature. Ta=25°C Note- 1 See to the ‘Transient Theemal impedance’ °C °C graph Note - 5:IF< = -ID, -di/dt=50A/µs,VCC< = BVDSS,Tch< = 150°C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG...