• Part: 2SK3777-01R
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 136.45 KB
Download 2SK3777-01R Datasheet PDF
Fuji Electric
2SK3777-01R
2SK3777-01R is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR d V DS /dt d V/dt PD Tch Tstg Ratings 300 300 53 ±212 ±30 53 1013.9 41 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A m J m J Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note - 1 Note - 2 Note - 3 Source(S) Note - 1:Tch < = 150°C,Repetitive and Non-repetitive Note - 2:Starting Tch=25°C,IAS=22A,L=3.03m H, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note - 3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph < < Note - 4:IF< = -ID, -di/dt=50A/µs,VCC= BVDSS,Tch= 150°C k V/µs VDS= < 300V k V/µs Note - 4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =300V VGS=0V...