7MBR75UB120 Datasheet | Fuji Electric

Features - Low VCE(sat) - pact Package - P.C. Board Mount Module - Converter Diode Bridge Dynamic Brake Circuit Applications - Inverter for Motoe Drive - AC and DC Servo Drive Amplifier - Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC V RRM V RRM IO IFSM I2t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 ±20 75 50 150 100 75 150 275 1200 ±20 35 25 70 50 160 1200 1600 75 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 - 1 Unit V V A Continuous Tc=25°C Tc=80°C Tc=25°C Tc=80°C Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1ms 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base - 2 voltage between thermistor and others - 3 Mounting screw torque AC : 1 minute W V V A A A 2s °C °C V V N- m - 1 Remendable value : 2.5 to 3.5 N- m (M5) - 2 All terminals should be connected together when isolation test will be done. - 3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter http://.. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff...