• Part: FGW75XS65
  • Description: Discrete IGBT
  • Manufacturer: Fuji Electric
  • Size: 546.28 KB
Download FGW75XS65 Datasheet PDF
Fuji Electric
FGW75XS65
FGW75XS65 is Discrete IGBT manufactured by Fuji Electric.
Features Low power loss Low switching surge and noise High reliability, high ruggedness Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbol VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Max. Power Dissipation Ptot Operating Junction Temperature Tvj Storage Temperature Tstg Value 650 ± 20 ± 30 115 75 300 437 -40 ~ +175 -55 ~ +175 Unit Remarks V tp < 1 μs A TC = 25 °C A TC = 100 °C A Note - 1 VCE ≤ 650 V Tvj ≤ 175 °C W Tc = 25 °C °C °C Note - 1 : Pulse width limited by Tvj max. Equivalent circuit ② Collector ① ②③ ① Gate TO-247-P/TO-247-P2...