• Part: FGZ50N65WE
  • Description: Discrete IGBT
  • Manufacturer: Fuji Electric
  • Size: 777.17 KB
Download FGZ50N65WE Datasheet PDF
Fuji Electric
FGZ50N65WE
FGZ50N65WE is Discrete IGBT manufactured by Fuji Electric.
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power conditioner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj=25°C (unless otherwise specified) Equivalent circuit Items Symbol Collector-Emitter Voltage V CES Gate-Emitter Voltage Transient Gate-Emitter Voltage V GES DC Collector Current IC@25 I C@100 Pulsed Collector Current Turn-Off Safe Operating Area - Diode Forward Current I F@25 I F@100 Diode Pulsed Current IGBT Max. Power Dissipation P D_IGBT FWD Max. Power Dissipation PD_FWD Operating Junction Temperature Tvj Storage Temperature Tstg Characteristics 650 ±20 ±30 70 50 200 200 200 330 170 -40 ~ +175 -55 ~ +175 Unit Remarks V Tp<1μs A TC=25ºC A TC=100ºC A Note - 1 A VCE≤650V, Tvj≤175ºC A A A Note - 1 W TC=25°C W TC=25°C °C °C ①...