FGZ50N65WE
FGZ50N65WE is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power conditioner Inverter welding machine
Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj=25°C (unless otherwise specified)
Equivalent circuit
Items
Symbol
Collector-Emitter Voltage
V CES
Gate-Emitter Voltage Transient Gate-Emitter Voltage
V GES
DC Collector Current
IC@25 I C@100
Pulsed Collector Current
Turn-Off Safe Operating Area
- Diode Forward Current
I F@25 I F@100
Diode Pulsed Current
IGBT Max. Power Dissipation
P D_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tvj
Storage Temperature
Tstg
Characteristics 650 ±20 ±30 70 50 200 200
200 330 170 -40 ~ +175 -55 ~ +175
Unit
Remarks
V Tp<1μs A TC=25ºC A TC=100ºC A Note
- 1 A VCE≤650V, Tvj≤175ºC A
A A Note
- 1 W TC=25°C W TC=25°C °C °C
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