FGZ75XS65C
FGZ75XS65C is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine http://.fujielectric./products/semiconductor/ Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbol VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
- Diode Forward Current
IF@25 IF@100
Diode Pulsed Current
IGBT Max. Power Dissipation
Ptot_IGBT
FWD Max. Power Dissipation
Ptot_FWD
Operating Junction Temperature Tvj
Storage Temperature
Tstg
Value 650 ± 20 ± 30 115 75 300
118 75 300 437 327 -40 ~ +175 -55 ~ +175
Unit
Remarks
V tp < 1 μs
A TC = 25 °C
A TC = 100 °C
A Note
- 1
VCE ≤ 650 V Tvj ≤ 175 °C
A Note
-...
