FMH20N60S1
FMH20N60S1 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant
Applications For switching
Outline Drawings [mm]
TO-3P(Q)
15.5max 13 ± 0.2 10 ± 0.2
φ3.2± 0.1
1.5±0.2 4.5±0.2
1.5 3 ±0.2
19.5 ±0.2
5 ±0.1
14.5 ±0.2
+0.3 -0.1
+0.3 -0.1
5.45 ± 0.2
+0.3 -0.1
PRE-SOLDER
+0.2 -0.1
5.45 ± 0.2
+0.2 0
CONNECTION
1 GATE 2 DRAIN 3 SOURCE
DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Symbol VDS VDSX ID
Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS
EAS d VDS/dt d V/dt...
